@article{oai:ous.repo.nii.ac.jp:00000970,
 author = {中川, 幸子 and Nakagawa, Sachiko and 竹内, 智子 and Takeuchi, Tomoko and 大石, 勝己 and Ohishi, Katsumi},
 journal = {岡山理科大学紀要. A, 自然科学, Bulletin of Okayama University of Science. A, Natural Sciences},
 month = {Mar},
 note = {P(論文), We have examined the electron tranfer process for low energy ions Z_1 implanted into silicon, with much less velocity than the Fermi velocity. The polarization effect on the outermost orbitals was the main concern. This effect elevated the transfer probability as about 3 times as compared to the case neglecting it. This encourages Z_1-rang-oscillation observed at 0.01<ε<0.1.},
 pages = {59--65},
 title = {低エネルギー原子衝突における電子的阻止能のZ依存性},
 volume = {28},
 year = {1993},
 yomi = {ナカガワ, サチコ and タケウチ, トモコ and オオイシ, カツミ}
}