{"created":"2023-06-19T10:34:52.643632+00:00","id":750,"links":{},"metadata":{"_buckets":{"deposit":"5b74233a-e4cd-453e-a6a4-2aa56f8ba76d"},"_deposit":{"created_by":14,"id":"750","owners":[14],"pid":{"revision_id":0,"type":"depid","value":"750"},"status":"published"},"_oai":{"id":"oai:ous.repo.nii.ac.jp:00000750","sets":["296:314:320"]},"author_link":["9692","9693","9694","9695"],"item_1_biblio_info_14":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1987-03-05","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"109","bibliographicPageStart":"95","bibliographicVolumeNumber":"22","bibliographic_titles":[{"bibliographic_title":"岡山理科大学紀要. A, 自然科学","bibliographic_titleLang":"ja"},{"bibliographic_title":"Bulletin of Okayama University of Science. A, Natural Sciences","bibliographic_titleLang":"en"}]}]},"item_1_creator_6":{"attribute_name":"著者名","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"大森, 健三","creatorNameLang":"ja"},{"creatorName":"オオモリ, ケンゾウ","creatorNameLang":"ja-Kana"},{"creatorName":"Ohmori, Kenzo","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"大石, 正和","creatorNameLang":"ja"},{"creatorName":"オオイシ, マサカズ","creatorNameLang":"ja-Kana"},{"creatorName":"Ohishi, Masakazu","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"藤井, 義弘","creatorNameLang":"ja"},{"creatorName":"フジイ, ヨシヒロ","creatorNameLang":"ja-Kana"},{"creatorName":"Fujii, Yoshihiro","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"斉藤, 博","creatorNameLang":"ja"},{"creatorName":"サイトウ, ヒロシ","creatorNameLang":"ja-Kana"},{"creatorName":"Saito, Hiroshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_1_description_1":{"attribute_name":"ページ属性","attribute_value_mlt":[{"subitem_description":"P(論文)","subitem_description_type":"Other"}]},"item_1_description_12":{"attribute_name":"抄録(英)","attribute_value_mlt":[{"subitem_description":"Thin layer crystals of ZnSe grown by molecular beam epitaxy on GaAs substrates are studied by means of reflection high energy electron diffraction (RHEED). Observation of the RHEED patterns has revealed that something like a 3-dimensional deposition of Zn and Se atoms or molecules smoothes the GaAs substrate surface at the initial stage of the growth, and then the 2-dimensional or layer growth takes place. Besides the RHEED patterns due to the bulk crystal, additional diffraction patterns are also observed in some directions of the incident electron beams with respect to the direction of the crystal surface. These additional patterns are interpreted to the reconstruction of the surface atoms on the epitaxial layer. With the aid of luminescence properties as well as mass analyses, the obtained ZnSe crystals are found to have good enough quality.","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_1_source_id_13":{"attribute_name":"雑誌書誌ID","attribute_value_mlt":[{"subitem_source_identifier":"AN00033244","subitem_source_identifier_type":"NCID"}]},"item_1_text_10":{"attribute_name":"著者所属(英)","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Department of Applied Physics, Okayama University of Science"},{"subitem_text_language":"en","subitem_text_value":"Department of Applied Physics, Okayama University of Science"},{"subitem_text_language":"en","subitem_text_value":"Department of Applied Physics, Okayama University of Science"},{"subitem_text_language":"en","subitem_text_value":"Department of Applied Physics, Okayama University of Science"}]},"item_1_text_9":{"attribute_name":"著者所属(日)","attribute_value_mlt":[{"subitem_text_language":"ja","subitem_text_value":"岡山理科大学応用物理学科"},{"subitem_text_language":"ja","subitem_text_value":"岡山理科大学応用物理学科"},{"subitem_text_language":"ja","subitem_text_value":"岡山理科大学応用物理学科"},{"subitem_text_language":"ja","subitem_text_value":"岡山理科大学応用物理学科"}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"1987-03-05"}],"displaytype":"detail","filename":"KJ00000063303.pdf","filesize":[{"value":"787.8 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"url":"https://ous.repo.nii.ac.jp/record/750/files/KJ00000063303.pdf"},"version_id":"e3ab17d4-bc5a-4931-87df-023baf6f39af"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"高速電子線回折によるZnSe/GaAsエピタキシャル成長薄膜の研究","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"高速電子線回折によるZnSe/GaAsエピタキシャル成長薄膜の研究","subitem_title_language":"ja"},{"subitem_title":"Study of Epitaxially Grown ZnSe/GaAs by Means of Reflection High Energy Electron Diffraction","subitem_title_language":"en"},{"subitem_title":"コウソク デンシセン カイセツ ニヨル ZNSE GAAS エピタキシャル セイチョウ ハクマク ノ ケンキュウ","subitem_title_language":"ja-Kana"}]},"item_type_id":"1","owner":"14","path":["320"],"pubdate":{"attribute_name":"PubDate","attribute_value":"1987-03-05"},"publish_date":"1987-03-05","publish_status":"0","recid":"750","relation_version_is_last":true,"title":["高速電子線回折によるZnSe/GaAsエピタキシャル成長薄膜の研究"],"weko_creator_id":"14","weko_shared_id":-1},"updated":"2023-09-27T05:40:06.939362+00:00"}