@article{oai:ous.repo.nii.ac.jp:00000543,
 author = {金谷, 輝人 and Kanadani, Teruto and 谷本, 雅 and Tanimoto, Tadashi and 太田, 陸奥雄 and Ohta, Mutsuo},
 journal = {岡山理科大学紀要, The Bulletin of the Okayama University of Science,},
 month = {Mar},
 note = {P(論文), Several Al-Zn alloys containing 0.1～4.0wt.%Zn and pure Al were studied by means of measurements of electrical resistivity. The results obtained are as follows : (1) When annealed isothermally at a certain temperature T_A higher than S_<G.P.>, the state containing clusters corresponding to T_A is reached by the migration of zinc atoms. (2) In all alloys used, each ρ_0-T_Q curve exhibits a minimum value, ρ_0^<min>, that is, clusters are formed in very dilute alloys as Al-0.1wt.%Zn. They are formed also at temperatures higher than solvus.},
 pages = {89--99},
 title = {低濃度Al-Zn合金中のクラスターについて},
 volume = {13},
 year = {1978},
 yomi = {カナダニ, テルト and タニモト, タダシ and オオタ, ムツオ}
}