{"created":"2023-06-19T10:35:14.498653+00:00","id":1191,"links":{},"metadata":{"_buckets":{"deposit":"996e8044-543e-4f59-89a4-2eacfcfecafb"},"_deposit":{"created_by":14,"id":"1191","owners":[14],"pid":{"revision_id":0,"type":"depid","value":"1191"},"status":"published"},"_oai":{"id":"oai:ous.repo.nii.ac.jp:00001191","sets":["296:314:330"]},"author_link":[],"item_1_biblio_info_14":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1997-03-31","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"119","bibliographicPageStart":"113","bibliographicVolumeNumber":"32","bibliographic_titles":[{"bibliographic_title":"岡山理科大学紀要. A, 自然科学","bibliographic_titleLang":"ja"},{"bibliographic_title":"Bulletin of Okayama University of Science. A, Natural Sciences","bibliographic_titleLang":"en"}]}]},"item_1_creator_6":{"attribute_name":"著者名","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"石川, 尚道","creatorNameLang":"ja"},{"creatorName":"イシカワ, ナオミチ","creatorNameLang":"ja-Kana"},{"creatorName":"Ishikawa, Naomichi","creatorNameLang":"en"}]},{"creatorNames":[{"creatorName":"多田, 昭晴","creatorNameLang":"ja"},{"creatorName":"タダ, アキハル","creatorNameLang":"ja-Kana"},{"creatorName":"Tada, Akiharu","creatorNameLang":"en"}]}]},"item_1_description_1":{"attribute_name":"ページ属性","attribute_value_mlt":[{"subitem_description":"P(論文)","subitem_description_type":"Other"}]},"item_1_description_12":{"attribute_name":"抄録(英)","attribute_value_mlt":[{"subitem_description":"It is important thema for memory LSI to be low voltage. Differencial sense amplifier (current mirror sense amplifier) is used to find reading signal from memory cell, but this circuit have fault that large tip size and large power. This paper purpose low-voltage , low-power and reducing tip size, optimize MOS transistor size in cussent sense amplifier by SPICE simulation. This circuit used EPROM that can erase by Ultraviolet rays to rewrite in experiment.","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_1_source_id_13":{"attribute_name":"雑誌書誌ID","attribute_value_mlt":[{"subitem_source_identifier":"AN00033244","subitem_source_identifier_type":"NCID"}]},"item_1_text_10":{"attribute_name":"著者所属(英)","attribute_value_mlt":[{"subitem_text_language":"en","subitem_text_value":"Graduate School of Engineering, Okayama University of Science"},{"subitem_text_language":"en","subitem_text_value":"Department of Information and Computer Engineering, Okayama University of Science"}]},"item_1_text_9":{"attribute_name":"著者所属(日)","attribute_value_mlt":[{"subitem_text_language":"ja","subitem_text_value":"岡山理科大学大学院工学研究科修士課程情報工学専攻"},{"subitem_text_language":"ja","subitem_text_value":"岡山理科大学工学部情報工学科"}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"1997-03-31"}],"displaytype":"detail","filename":"KJ00000063700.pdf","filesize":[{"value":"248.0 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"url":"https://ous.repo.nii.ac.jp/record/1191/files/KJ00000063700.pdf"},"version_id":"ff87fc50-4f8e-4015-8059-464f71c511a0"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"departmental bulletin paper","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"低電圧電流形センスアンプ回路におけるMOSトランジスタサイズの影響","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"低電圧電流形センスアンプ回路におけるMOSトランジスタサイズの影響","subitem_title_language":"ja"},{"subitem_title":"Effects of MOS Transistor Size in Current Sense Amplifier for Low-voltage Memories","subitem_title_language":"en"},{"subitem_title":"テイデンアツ デンリュウガタ センスアンプ カイロ ニオケル MOSトランジスタ サイズ ノ エイキョウ","subitem_title_language":"ja-Kana"}]},"item_type_id":"1","owner":"14","path":["330"],"pubdate":{"attribute_name":"PubDate","attribute_value":"1997-03-31"},"publish_date":"1997-03-31","publish_status":"0","recid":"1191","relation_version_is_last":true,"title":["低電圧電流形センスアンプ回路におけるMOSトランジスタサイズの影響"],"weko_creator_id":"14","weko_shared_id":-1},"updated":"2023-09-28T00:55:30.467129+00:00"}