@article{oai:ous.repo.nii.ac.jp:00001191,
 author = {石川, 尚道 and Ishikawa, Naomichi and 多田, 昭晴 and Tada, Akiharu},
 journal = {岡山理科大学紀要. A, 自然科学, Bulletin of Okayama University of Science. A, Natural Sciences},
 month = {Mar},
 note = {P(論文), It is important thema for memory LSI to be low voltage. Differencial sense amplifier (current mirror sense amplifier) is used to find reading signal from memory cell, but this circuit have fault that large tip size and large power. This paper purpose low-voltage , low-power and reducing tip size, optimize MOS transistor size in cussent sense amplifier by SPICE simulation. This circuit used EPROM that can erase by Ultraviolet rays to rewrite in experiment.},
 pages = {113--119},
 title = {低電圧電流形センスアンプ回路におけるMOSトランジスタサイズの影響},
 volume = {32},
 year = {1997},
 yomi = {イシカワ, ナオミチ and タダ, アキハル}
}